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Self-Aligned Indium–Gallium–Zinc Oxide Thin-Film Transistor With Phosphorus-Doped Source/Drain Regions

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5 Author(s)
Rongsheng Chen ; Center for Display Research, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong ; Wei Zhou ; Meng Zhang ; Man Wong
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Self-aligned top-gate amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with phosphorusdoped source/drain regions are developed in this letter. The resulting a-IGZO TFT exhibits high thermal stability and good electrical performance, including field-effect mobility of 5 cm2/V · s, a threshold voltage of 5.6 V, a subthreshold swing of 0.5 V/dec, and an on/off current ratio of 6 × 107. With scaling down of the channel length, good characteristics are also obtained with a small shift in the threshold voltage and no degradation in the subthreshold swing.

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IEEE Electron Device Letters  (Volume:33 ,  Issue: 8 )