840 V/6 A-AlGaN/GaN Schottky Barrier Diode With Bonding Pad Over Active Structure Prepared on Sapphire Substrate

Multifinger lateral-type AlGaN/GaN Schottky barrier diode (SBD) with bonding pad over active (BPOA) structure was fabricated and exhibited excellent device performances, such as forward current of 6 A at 1.5 V, leakage current of 16
$\mu\hbox{A}$
at
$-$
600 V, reverse-recovery time
$(T_{\rm rr})$
of 18 ns, breakdown voltage of 840 V, and low specific on-resistance
$(R_{\rm on})$
of 9
$\hbox{m}\Omega \cdot \hbox{cm}^{2}$
, resulting in the figure-of-merit
$(V_{\rm BR}^{2}/R_{\rm on})$
as high as 78
$\hbox{MW/cm}^{2}$
, which demonstrates that the AlGaN/GaN SBD with BPOA structure has a great potential application to the high-power electronics.