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840 V/6 A-AlGaN/GaN Schottky Barrier Diode With Bonding Pad Over Active Structure Prepared on Sapphire Substrate

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4 Author(s)
Jae-Hoon Lee ; R&D Inst., Samsung LED Co., Ltd., Suwon, South Korea ; Jong-Kyu Yoo ; Hee-Sung Kang ; Jung-Hee Lee

Multifinger lateral-type AlGaN/GaN Schottky barrier diode (SBD) with bonding pad over active (BPOA) structure was fabricated and exhibited excellent device performances, such as forward current of 6 A at 1.5 V, leakage current of 16 A at -600 V, reverse-recovery time (Trr) of 18 ns, breakdown voltage of 840 V, and low specific on-resistance (Ron) of 9 m cm2, resulting in the figure-of-merit (VBR2/Ron) as high as 78 MW/cm2, which demonstrates that the AlGaN/GaN SBD with BPOA structure has a great potential application to the high-power electronics.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 8 )