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Thermally Stable Operation of H-Terminated Diamond FETs by \hbox {NO}_{2} Adsorption and \hbox {Al}_{2}\hbox {O}_{3} Passivation

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5 Author(s)
Kazuyuki Hirama ; NTT Basic Research Laboratories, NTT Corporation, Atsugi, Japan ; Hisashi Sato ; Yuichi Harada ; Hideki Yamamoto
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Using the NO2 adsorption and Al2O3 passivation technique, we improved the thermal stability of hydrogen-terminated diamond field-effect transistors (FETs) and then demonstrated stable operation at 200 °C in a vacuum for the first time. At 200 °C, the drain current IDS of a passivated diamond FET remained constant for at least more than 2 h. No degradation of FET characteristics was observed after the 200 °C heating cycle. Furthermore, a passivated diamond FET with a gate length of 0.2 μm showed high maximum IDS of -1000 mA/mm and an RF output power density of 2 W/mm.

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IEEE Electron Device Letters  (Volume:33 ,  Issue: 8 )