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AC/DC characterization of NMOS and PMOS hot-carrier-induced degradation under AC/DC stress

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3 Author(s)
Dawes, M. ; Intel Corp., Hillsboro, OR, USA ; Alavi, M. ; Kim, D.M.

The AC/DC measurements of NMOS and PMOS Idsat shifts are compared following DC stress. The results of the I dsat shifts are found to be the same. The AC Idsat measurements were performed under a variety of different conditions (varying frequency, amplitude, and base level) and showed that hot-carrier-induced interfaced states are shallow and fast (<20 ns). AC versus DC stressing was also examined. In PMOS devices, pulsed drain stress was found to be generally quasi-static, while pulsed gate stress produced enhanced device degradation under certain bias conditions. In NMOS transistors AC drain stress was found to be quasi-static in strong device saturation, while AC gate stress resulted in significantly enhanced degradation. In weak device saturation, both gate and drain pulsing resulted in early catastrophic device failure

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Electron Devices, IEEE Transactions on  (Volume:37 ,  Issue: 11 )