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Design of a 9–25 GHz broadband low noise amplifier using 0.15-μm GaAs HEMT process

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3 Author(s)
Jeng-Han Tsai ; Dept. of Appl. Electron. Technol., Nat. Taiwan Normal Univ., Taipei, Taiwan ; Ji-Yang Lin ; Kun-Yao Ding

A 9-25 GHz low noise amplifier (LNA) is design and implemented in 0.15-μm GaAs HEMT process. Utilizing a resistive feed-back technique, the two-stage common source LNA achieves a broadband and flat frequency response. The measured small-signal gain is 20 ± 1.5 dB from 9-25 GHz and the 3-dB bandwidth is 94 %. With the feature of the resistive feed-back technique, the LNA achieves a 1-dB bandwidth up to 53.3 % from 11 to 19 GHz with flat gain frequency response of 21 ± 0.5 dB. The noise figure is 3.5 ± 0.5 from 9 to 21 GHz. The chip size is only 1.5 mm × 1 mm.

Published in:

Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on  (Volume:5 )

Date of Conference:

5-8 May 2012