By Topic

A novel compact Ka band fourth-harmonic image rejection mixer

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Changsi Wang ; Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China, Chengdu, China ; Yuehang Xu ; Yunchuan Guo ; Ruimin Xu
more authors

Wth the commercial 0.15-μm pseudomorphic high electron mobility transistor (pHEMT) process, a novel compact Ka-band fourth-harmonic image rejection resistive FET mixer is designed in this paper. A compact Balun with two scale-down Lange couplers used for the impedance transformation is proposed for LO signal pump. The results show that less than 19.5 dB Conversion Loss (CL) in 32~38 GHz, more than 21 dB Image Rejection Ration (IRR) in 32~36.5 GHz, and better than 30 dB and 42 dB high isolation, from LO to RF and 4LO to RF, respectively, can be achieved by the proposed configuration. The chip size is minimized to 1.8 mm×1.4 mm.

Published in:

Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on  (Volume:5 )

Date of Conference:

5-8 May 2012