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Relationship between measured and intrinsic conductances of MOSFETs

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1 Author(s)
Cserveny, S. ; Swiss Center for Electron. & Microtech., Neuchatel, Switzerland

The relationship between measured and intrinsic MOSFET small-signal conductances in the presence of source and drain series resistances given by S.Y. Chou et al. (1987) is modified to include the effect of the source resistance on the substrate bias. The equation relating the measured to the intrinsic conductances of MOSFETs with constant resistances in series with the source and the drain is derived considering the effect of the voltage drops in these resistors on gate-source, drain-source, and substrate-source voltages. The resulting degradation is the same for all small-signal conductances. The general equations make it possible to determine the conditions where the simpler previous equations can be used

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Electron Devices, IEEE Transactions on  (Volume:37 ,  Issue: 11 )