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A closed-loop evaluation and validation of a method for determining the scattering limited carrier velocity in MOSFETs

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2 Author(s)
Lee, S.-W. ; Intel Corp., Santa Clara, CA, USA ; Chan, T.-Y.

A closed-loop evaluation of a saturation transconductance (g msat(i)) based method for determining the scattering limited carrier velocity (νsat) in enhancement MOSFETs was performed with the use of a 2-D device simulator. Consistency in the extracted νsat over a wide range of gate oxide thickness (Tox), channel doping concentration, and bias condition was tested and verified. Also analyzed are the appropriate measurement condition, the significance of the parasitic effect due to the source and drain resistances, the applicability of the method used for compensating this parasitic effect, and the expected accuracy of the extracted νsat under ideal conditions. A plausible explanation is provided for the inconsistency between νsat determined from gmsat(i)(0), the extrapolated transconductance, and νsat determined from the slope of [ gmsat(i)(0)]-1 versus T ox characteristics observed in published results. The gmsat (i)-based method for extracting νsat has been applied to MOSFETs fabricated with three vastly different technologies, and the experimentally-based νsat of electrons at 300 K ranges from 7.37×106 to 7.92×106 cm/s, which shows its independence of technology

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Electron Devices, IEEE Transactions on  (Volume:37 ,  Issue: 11 )