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Narrow-gate In0.53Ga0.47As junction field-effect transistors as tunable resistors for long-wavelength integrated optical receivers

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6 Author(s)
Lo, D.C.W. ; Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA ; Brown, Julia J. ; Gardner, J.T. ; Chung, Y.K.
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The fabrication of In0.53Ga0.47As junction field-effect transistors (JFETs) for use as active feedback resistors in integrated transimpedance photoreceivers is described. Transistors using both air-bridge and non-air-bridge technologies are described. Varying the gate-to-source voltage (VGS) allows the output resistance to be tuned continuously between 3 and 40 kΩ with a drain-to-source shunt capacitance of less than 10 fF. The temperature coefficient of the output resistance is between -5 and -20 Ω/°C (for VGS less than the pinch-off voltage). The combination of large resistance and low shunt capacitance can result in high receiver sensitivity without sacrificing amplifier dynamic range. The feedback FETs are fabricated adjacent to 1.8-μm gate JFETs with transconductances of 110 mS/mm and gate-to-source capacitances of 1.3 pF/mm

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Electron Devices, IEEE Transactions on  (Volume:37 ,  Issue: 11 )