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Fractal structures for low-resistance large area AlGaN/GaN power transistors

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10 Author(s)
Reiner, R. ; Fraunhofer Inst. for Appl. Solid State Phys., IAF, Freiburg, Germany ; Waltereit, P. ; Benkhelifa, F. ; Muller, S.
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This work introduces a new design approach for the use of fractal structures for low-resistance large area transistors structures. Aspects of layout with adapted current density and high-area utilization are considered. Furthermore the work presents a realization of fractal structures in AlGaN/GaN technology. Both static and dynamic behaviors are characterized. The fabricated devices achieve a breakdown voltage of VBR >; 700V and on-state currents of ID = 40A at VGS = 1V.

Published in:

Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on

Date of Conference:

3-7 June 2012

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