Fractal structures for low-resistance large area AlGaN/GaN power transistors

This work introduces a new design approach for the use of fractal structures for low-resistance large area transistors structures. Aspects of layout with adapted current density and high-area utilization are considered. Furthermore the work presents a realization of fractal structures in AlGaN/GaN technology. Both static and dynamic behaviors are characterized. The fabricated devices achieve a breakdown voltage of V
_BR
>; 700V and on-state currents of I
_D
= 40A at V
_GS
= 1V.