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Transit-time limited frequency response of InGaAs MSM photodetectors

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2 Author(s)
J. B. D. Soole ; Bellcore, Red Bank, NJ, USA ; H. Schumacher

Calculations are reported of the transit-time limited frequency response of InGaAs interdigitated metal-semiconductor-metal (MSM) Schottky barrier photodetectors for 1.55-μm wavelength incident radiation. The response is examined for light which is incident from above and a two-dimensional simulation based on carrier drift is used. It is shown how the impulse response of the device changes as the interdigital spacing and the InGaAs layer thickness vary over the range typically assumed by practical detectors. The device bandwidths are also computed, and the tradeoff which occurs between high-speed performance and high quantum efficiency is studied

Published in:

IEEE Transactions on Electron Devices  (Volume:37 ,  Issue: 11 )