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Si hetero-bipolar transistor with a fluorine-doped SiC emitter and a thin, highly doped epitaxial base

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3 Author(s)
T. Sugii ; Fujitsu Lab. Ltd., Atsugi, Japan ; T. Yamazaki ; T. Ito

The effect of fluorine doping on SiC/Si heterojunction bipolar transistors (HBTs) is studied. The film properties of the fluorine-doped SiC and device characteristics of an HBT using the SiC emitter and a 50-nm-thick, highly doped epitaxial base (1019/cm3) are presented. The current gain is improved from 15 to 80 by doping with fluorine. The current gain is four times larger than that of a conventional poly-Si emitter homo-transistor with the same base structure. In spite of the very thin base, the Early voltage is over 100 V. Forward-bias tunneling current was hardly seen at the emitter-base junction. The fluorine appears to terminate the dangling bonds. The results show the possibility of fabricating transistors with a very thin, highly doped base

Published in:

IEEE Transactions on Electron Devices  (Volume:37 ,  Issue: 11 )