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Browse Journals & Magazines > Applied Physics Letters ...> Volume:100 Issue:26 Help

Solution-processed ambipolar vertical organic field effect transistor

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4 Author(s)
Ben-Sasson, Ariel J. ; Department of Electrical Engineering, Sara and Moshe Zisapel Nano-Electronic Center, Technion—Israel Institute of Technology, Haifa 3200, Israel ; Chen, Zhihua ; Facchetti, Antonio ; Tessler, Nir

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.4731774 

We report on a solution-processed ambipolar patterned-electrode vertical organic field effect transistor (PE-VOFET) based on the P(NDI2OD-T2) polymer. The Schottky barrier-based VOFET operation uniquely facilitates an ambipolar transport using a single anode-cathode-electrode and a single semiconductor material. Pin-hole free sub-100 nanometer channel length devices are obtained with no high resolution patterning owing to both the polymer’s smooth morphology and the underlining patterned-electrode’s flatness. The VOFET exhibits n-type on/off ratio >103, current density >50 [mAcm-2] under VDS = 5 V, as well as p-type operation. Prone to design and optimization, the ambipolar PE-VOFET is a promising platform for organic complementary circuit technology.

Published in:
Applied Physics Letters  (Volume:100 ,  Issue: 26 )

Date of Publication: Jun 2012

Page(s):
263306 - 263306-4
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.4731774
Product Type:
Journals & Magazines
Date of Current Version :
02 July 2012
Issue Date :
Jun 2012

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