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Fabrication and characterization of a silicon metal-oxide-semiconductor based triple quantum dot

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4 Author(s)
Pan, H. ; Department of Physics and Astronomy, University of California, Los Angeles, Los Angeles, California 90095, USA ; House, M.G. ; Hao, X. ; Jiang, H.W.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.4731275 

We fabricate electrostatically defined, few-electron triple quantum dot (TQD) devices in a silicon metal-oxide-semiconductor structure and obtain stability diagrams in the few-electron regime through charge detection by a nearby quantum point contact. We demonstrate the tunability of the TQD by achieving the quadruple points where all three dots are on resonance. The tuning evolutions are shown to be consistent with a constant interaction model. We identify quantum cellular automata phenomena near the quadruple point.

Published in:

Applied Physics Letters  (Volume:100 ,  Issue: 26 )

Date of Publication:

Jun 2012

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