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Xs-MET, a reduced complexity fabrication process using complementary heterostructure field effect transistors for analog, low power, space applications

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14 Author(s)
Cerny, C. ; Wright Lab., Wright-Patterson AFB, OH, USA ; Via, D. ; Ebel, J. ; DeSaivo, G.
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The requirements for space-based integrated circuit applications are defined with an emphasis on being radiation tolerant and low power consuming. Flexible analog signal processors (FASPs) are outlined as a means by which effective circuit designs can be utilized to perform a multitude of tasks. The development of complementary III-V technologies have been proven to meet the demands of the space environment, and have demonstrated the potential for frequency operation beyond 1 GHz using power supply voltages at or below 1.5 Volts. The novel fabrication process known as χs-MET (pronounced kismet, which uses the Greek letter χ, and stands for complementary heterostructure integrated single metal transistor), is introduced as manufacturing technique to be used in FASP design. The χs-MET fabrication process is outlined with preliminary device results presented. An example of a FASP circuit design using χs-MET is provided. Conclusions regarding the utilization of the χs-MET process for FASPs are outlined with comments focusing on a space-based demonstration

Published in:

Aerospace and Electronics Conference, 1997. NAECON 1997., Proceedings of the IEEE 1997 National  (Volume:2 )

Date of Conference:

14-18 Jul 1997

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