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Ambipolar inverters using SnO thin-film transistors with balanced electron and hole mobilities

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9 Author(s)
Yan Liang, Ling ; Division of Functional Materials and Nano Devices, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Ningbo 315201, People’s Republic of China ; Tao Cao, Hong ; Bo Chen, Xiao ; Min Liu, Zhi
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Ambipolar thin film transistors have attracted increasing research interests due to their promising applications in complementary logic circuits and the dissipative charge transporting devices. Here, we report the fabrication of an ambipolar transistor using tin mono-oxide (SnO) as a channel, which possesses balanced electron and hole field-effect mobilities. A complementary metal oxide semiconductor-like inverter using the SnO dual operation transistors is demonstrated with a maximum gain up to 30 and long-term air stability. Such logic device configuration would simplify the circuit design and fabrication process, offering more opportunities for designing and constructing oxide-based logic circuits.

Published in:

Applied Physics Letters  (Volume:100 ,  Issue: 26 )

Date of Publication:

Jun 2012

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