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A Rigorous Classical Solution for the Drain Current of Doped Symmetric Double-Gate MOSFETs

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2 Author(s)
Ortiz-Conde, A. ; Solid State Electronics Laboratory, Universidad Simón Bolívar, Caracas, Venezuela ; Garcia-Sanchez, F.J.

We propose a new classical physics rigorous description of the drain current of long channel symmetric double-gate MOSFET with a doped body based on a single integral equation. Whereas existing descriptions are valid for limited ranges of doping concentrations, the equation presented here is valid for any doping concentration, including the so-called intrinsic body case. The description is based on a simple procedure to calculate the surface potential continuously from accumulation to inversion.

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Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 9 )