By Topic

Determination of the wavelength dependence of Auger recombination in long-wavelength quantum-well semiconductor lasers using hydrostatic pressure

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
M. Silver ; Dept. of Phys., Surrey Univ., Guildford, UK ; E. P. O'Reilly ; A. R. Adams

The variation of the threshold current of an unstrained 1.48-μm InGaAsP quantum-well (QW) laser has been measured as a function of hydrostatic pressure up to 27 kbar. We combine this result with theoretical calculations to extract the bandgap dependence of the Auger coefficient, C, over a range of 200 meV. We find that over this range C reduces by a factor of about three. We have calculated the bandgap dependence of the main Auger processes and conclude that the dominant Auger process over this wavelength range could either be the phonon-assisted CHCC process or the band-to-band CHSH process. Based on this result, we have estimated the threshold current density of strained and unstrained lasers with wavelengths ranging from 1.75 to 1.3 μm using both these processes. We get good agreement between theory and experiment in both cases and show that Auger recombination is the dominant current contribution in 1.5- and 1.3-μm devices

Published in:

IEEE Journal of Quantum Electronics  (Volume:33 ,  Issue: 9 )