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Transistor and interconnect modeling for design of carbon nanotube integrated circuits

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1 Author(s)
Ashok Srivastava ; Department of Electrical and Computer Engineering, Louisiana State University, Baton Rouge, 70803, U.S.A.

The one-dimensional carbon nanotube (CNT) has excellent electrical, mechanical and thermal properties which have made the CNT one of the promising materials for applications in nanoelectronics and micro/nano-systems. Nanometer CMOS technology, especially in 22 nm and below, is plagued due to performance degradation of conventional Cu/low-k dielectric as an interconnect material for gigascale integration. In search for novel technologies, no such material has aroused so much interest other than carbon nanomaterials since the discovery of carbon nanotube. Recent work on analytical modeling equations describing the current transport in carbon nanotube field effect transistors and carbon nanotube interconnects will be presented for use in design of emerging logic devices similar to CMOS design style.

Published in:

Mixed Design of Integrated Circuits and Systems (MIXDES), 2012 Proceedings of the 19th International Conference

Date of Conference:

24-26 May 2012