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Technology and device design and optimization for the MOSFET hall sensor on SOI structure

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6 Author(s)
Dolgiy, L. ; Micro- & Nanoelectron. Dept., Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus ; Lovshenko, I. ; Nelayev, V. ; Shelibak, I.
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Results of the magnetosensitive device (a MOSFET Hall sensor on the SOI structure) manufacturing simulation are presented. Electrical features of the device were calculated and the optimization research of the process parameters influence on voltage-current characteristics of the device was made.

Published in:

Mixed Design of Integrated Circuits and Systems (MIXDES), 2012 Proceedings of the 19th International Conference

Date of Conference:

24-26 May 2012

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