Referenced Items are not available for this document.
Arrhenius plots of conductivity in low-pressure chemical vapor deposited (LPCVD) polycrystalline silicon thin-film transistors (TFTs) are curved when the films are deposited at pressures below 40 mtorr. These deviations from straight lines are explained by spatial potential fluctuations over the grain boundary plane described by a Gaussian type distribution. When grain boundary inhomogeneities are not taken into account, the determined trap states density and the threshold voltage of the transistor are underestimated
Published in:
Electron Devices, IEEE Transactions on
(Volume:44
,
Issue:
9
)
Date of Publication: Sep 1997
- Page(s):
- 1563 - 1565
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 5693586
- Digital Object Identifier :
- 10.1109/16.622619
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Sep 1997
- Sponsored by :
- IEEE Electron Devices Society
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