Referenced Items are not available for this document.
A reliable tantalum (Ta)-gate device technology, which can drastically reduce the number of process steps, has been developed. Ta-gate fully-depleted-silicon-on-insulator (FDSOI) MOSFETs with 0.15-μm gate length by low-temperature processing below 500°C after the gate oxide formation have good on/off characteristics. Comprehensive design guidelines for Ta-gate MOSFETs in the deep-submicrometer regime is provided by investigating a wide range of performance and reliability constraints on the process temperature and the SOI thickness. In the guideline, the recrystallization of the source/drain region gives inferior limits of the SOI thickness and the process temperature. Thermal reaction between Ta and SiO2 films sets a superior limit of the process temperature, and a short-channel effect sets a superior limit of the SOI thickness
Published in:
Electron Devices, IEEE Transactions on
(Volume:44
,
Issue:
9
)
Date of Publication: Sep 1997
- Page(s):
- 1467 - 1472
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 5687337
- Digital Object Identifier :
- 10.1109/16.622603
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Sep 1997
- Sponsored by :
- IEEE Electron Devices Society
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