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A thermal-fully hydrodynamic model for semiconductor devices and applications to III-V HBT simulation

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3 Author(s)
A. Benvenuti ; Dipartimento di Elettronica, Politecnico di Torino, Italy ; W. M. Coughrau ; M. R. Pinto

Because of the interaction between self-heating and hot carriers effects, neither isothermal nor conventional macrothermal models are adequate for the simulation of state-of-the-art power devices; instead, a detailed electro-thermal model accounting for nonstationary transport, such as the Thermal-Fully Hydrodynamic (T-FH) model, is required. We apply a one-dimensional (1-D) implementation of such a model to the simulation of AlGaAs/GaAs and InP/InGaAs Heterojunction Bipolar Transistors (HBTs), comparing the results with those provided by simplified models, and highlighting how deeply both nonlocal transport and self-heating affect the predicted device performance. The importance of the convective terms is assessed, and a new nonthermal mechanism for the output Negative Differential Resistance (NDR) is proposed

Published in:

IEEE Transactions on Electron Devices  (Volume:44 ,  Issue: 9 )