Close category search window
 

Design and simulation of high level low power 7T SRAM cell using various process & circuit techniques

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Mishra, S. ; VLSI Design, ITM Univ., Gwalior, India ; Dubey, A. ; Tomar, S.S. ; Akashe, S.

Low power memory is required today most priority with also high stability. The power is most important factor for today technology so the power reduction for one cell is vital role in memory design techniques. In this paper we introduced some design circuit techniques for low power design. Leakage current in standby mode is the major part of power loss. We concentrate on the technique that to reduced the leakage current in standby mode.

Published in:
Signal Processing, Computing and Control (ISPCC), 2012 IEEE International Conference on

Date of Conference: 15-17 March 2012

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.