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Domain epitaxy in TiO2/α-Al2O3 thin film heterostructures with Ti2O3 transient layer

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6 Author(s)
Bayati, M.R. ; Department of Materials Science and Engineering, North Carolina State University, EB-1, Raleigh, North Carolina 27695-7906, USA ; Molaei, R. ; Narayan, R.J. ; Narayan, J.
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Rutile TiO2 films were grown epitaxially on α-alumina (sapphire(0001)) substrates and characterized by x-ray diffraction and scanning transmission electron microscopy. It was revealed that the rutile film initially grows pseudomorphically on sapphire as Ti2O3 and, after a few monolayers, it grows tetragonally on the Ti2O3/sapphire platform. Formation of the Ti2O3 transient layer was attributed to the symmetry mismatch between tetragonal structure of TiO2 and hexagonal structure of alumina. The separation between the ½[101](101) misfit dislocations was dictated by Ti2O3 and was determined to be 9.7 Å which is consistent with 4/3 and 3/2 alternating domains across the film/substrate interface.

Published in:

Applied Physics Letters  (Volume:100 ,  Issue: 25 )

Date of Publication:

Jun 2012

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