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Trap properties of asymmetrical double-gate polysilicon thin-film transistors with low frequency noise in terms of the grain boundaries direction

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7 Author(s)
Hastas, N. ; Dept. of Phys., Aristotle Univ. of Thessaloniki, Thessaloniki, Greece ; Tsormpatzoglou, A. ; Pappas, I. ; Kouvatsos, D.N.
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Low frequency drain current fluctuation noise was measured in two types of polysilicon double gate thin film transistors fabricated by sequential lateral solidification technique keeping the back gate grounded. In X-oriented devices, the grain boundaries are parallel to the drain current flow, while in Y-oriented devices the grain boundaries are lying perpendicular to the drain current flow. The noise spectra consist of generation-recombination (g-r) and flicker noise components. In X-oriented TFTs the g-r centers are related to bulk traps located in the grains, whereas in Y-oriented TFTs the g-r centers correspond to grain boundary traps in addition to bulk traps in the grains.

Published in:

Microelectronics (MIEL), 2012 28th International Conference on

Date of Conference:

13-16 May 2012

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