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Microfabrication by mask-maskless wet anisotropic etching for realization of multilevel structures in {100} oriented Si

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4 Author(s)
Jovic, V. ; Center for Microelectron. Technol. & Single Crystals, Inst. of Chem., Technol. & Metall., Belgrade, Serbia ; Smiljanic, M.M. ; Lamovec, J. ; Popovic, M.

Step-like structures oriented along 〈110〉 or 〈100〉 directions on {100} oriented Si substrates are first etched with mask following maskless etching in 30 wt. % KOH solution in water at 80°C. The step structures investigated by maskless etching are convex prismatic edges bounded by {100} and {111} planes for 〈110〉 oriented steps or only {100} planes for 〈100〉 oriented steps. Experimental results are used to verify the nature of {hkl} cutting planes that are developed at the convex corners of the steps during maskless anisotropic etching. From analytical relations and experimental results, the ratio between the etching rates for the {hkl} (fast-etching plane at the edge step) and {100} planes is found for both step orientations.

Published in:

Microelectronics (MIEL), 2012 28th International Conference on

Date of Conference:

13-16 May 2012