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Impact of Strain Engineering on Nanoscale Ge PMOSFET

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3 Author(s)
Hsieh, B.-F. ; Dept. of Electr. Eng., Nat. Chung Hsing Univ., Taichung, Taiwan ; Chang, S.T. ; Huang, M.-H.

This work presents an analysis via simulation of the width dependence of the stress components (longitudinal, vertical and transverse) in the PMOS channel region, and its influence on electron mobility. A 3D ANSYS study on the stress distribution is performed; and the impact of channel width and channel length on the device performance such as mobility gain is explored.

Published in:

Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International

Date of Conference:

4-6 June 2012