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Epitaxial Growth of Highly Strained SiGe Layers Directly on Si(001) Substrate

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4 Author(s)
Halpin, J. ; Phys. Dept., Univ. of Warwick, Coventry, UK ; Shah, V. ; Myronov, M. ; Leadley, David

Highly strained epilayers of Si0.4Ge0.6 can be grown pseudomorphically on a Si (001) substrate with thicknesses up to ~25 nm. The epilayer surface morphology was analyzed by atomic force microscopy (AFM) and defects observed in the relaxed epilayers were analyzed by combination of plan view transmission electron microscopy PV-TEM and AFM.

Published in:

Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International

Date of Conference:

4-6 June 2012