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Fully Relaxed Epitaxial Silicon Germanium on Silicon (001) with Low Threading Dislocation Density by Ion Implantation and Anneal

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6 Author(s)
Jinping Liu ; Technol. Dev., GLOBALFOUNDRIES Inc., Sunnyvale, CA, USA ; Kasim, Johnson ; Lee, P. ; Chandra, R.
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This paper showed that good quality fully relaxed SiGe layer on Si substrate can be successfully obtained by implantation and high temperature annealing, two commonly used processes in CMOS processing technologies.

Published in:

Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International

Date of Conference:

4-6 June 2012