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Strain Control of Si and Si1-yCy Layers in Si/Si1-yCy/Si(100) Heterostructures

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5 Author(s)
Kikuchi, T. ; Lab. for Nanoelectron. & Spintronics, Tohoku Univ., Sendai, Japan ; Sakuraba, M. ; Costina, Ioan ; Tillack, B.
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This paper demonstrated that lattice constant and Raman shifts of Si-Si and Si-C modes of Si1-yCy are normalized by C fraction obtained from XPS C1s peak at 283.3 eV that is substitutional C fraction. By stripe-shape patterning of the Si(10 nm)/Si0.98C0.02(20-60 nm)/Si(100) heterostructure, compressive-strained Si cap layer was realized.

Published in:

Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International

Date of Conference:

4-6 June 2012