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Room-Temperature Electroluminescence from Tensile Strained Double-Heterojunction Ge Pin LEDs on Si Substrates

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6 Author(s)
Kaschel, M. ; Inst. of Semicond. Eng., Univ. of Stuttgart, Stuttgart, Germany ; Schmid, M. ; Gollhofer, M. ; Werner, J.
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A series of double-heterojunction tensile strained Ge pin LEDs on Si substrates have been successfully grown and processed. The effect of the strain and the thickness of the intrinsic layer on the direct band gap is evaluated using electroluminescence measurements.

Published in:

Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International

Date of Conference:

4-6 June 2012

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