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Characterization of Anisotropic Strain Relaxation after Mesa Isolation for Strained SGOI and SiGe/Si Structure with Newly Developed High-NA and Oil-Immersion Raman Method

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5 Author(s)
Koji Usuda ; Green Nanoelectron. Collaborative Res. Center (GNC), AIST, Tsukuba, Japan ; Daisuke Kosemura ; Motohiro Tomita ; Atsushi Ogura
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In this study, we have characterized local strain relaxation just after mesa isolation of strained SiGe layers using the new Raman method, and NBD techniques.

Published in:

Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International

Date of Conference:

4-6 June 2012