3-D Simulator of Laser Crystallization for Polycrystalline-Silicon Thin-Film Transistors

A 3-D simulator of laser crystallization for polycrystalline-silicon thin-film transistors has been developed. Random nucleation, crystal growth velocity, latent heat emission, and partial crystallization are modeled, and a 2-D algorithm is extended to a 3-D algorithm. The $mu$-Czochralski technique is analyzed using the 3-D simulator, and it is found that the grain size becomes large when the initial temperature is high after the laser irradiation.