By Topic

Calculation of the Nonlinear Junction Temperature for Semiconductor Devices Using Linear Temperature Values

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Darwish, A.M. ; Army Res. Lab., Adelphi, MD, USA ; Bayba, A.J. ; Khorshid, A. ; Rajaie, A.
more authors

The drive for smaller, faster, and higher output power integrated circuits continues to push the device junction (channel) temperature to higher levels. An accurate estimate of the maximum junction temperature is necessary for ensuring proper and reliable operation. In most cases, for simplicity, the thermal resistance within the device is calculated or measured assuming constant thermal conductivity, i.e., k. This consistently underestimates the junction temperature. Typically, the maximum temperature is calculated using the expression Tm = To + ΔTlin, where To is the base-plate temperature, and ΔTlin is the linear temperature rise. This paper derives a new expression, i.e., Tm = To exp(ΔTlin/To), replacing the common expression. It is shown that this new expression, which is reported for the first time, accounts for most of the resultant effect due to the nonlinearity of k, converges to the common expression for small ΔTlin, and is independent of the semiconductor material used in the device. Hence, an improved assessment of the junction temperature can be established even in cases where the temperature dependence of k is not known. The expression's validity is verified by comparing its results with those from finite-element simulations and experimental observations from GaAs heterojunction bipolar transistors and GaN HEMTs.

Published in:

Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 8 )