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In-Plane Gate Transistors With a 40- \mu\hbox {m} -Wide Channel Width

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5 Author(s)
Tung-Hsun Chung ; Res. Center for Appl. Sci., Acad. Sinica, Taipei, Taiwan ; Lin, Wei-Hsun ; Yi-Kai Chao ; Shu-Wei Chang
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An in-plane gate transistor with a GaAs/AlGaAs 2-D electron-gas channel about 40 μm in width is investigated. The saturation region and the drain current modulation at different gate bias voltages are observed despite the wide channel. The surface-induced channel depletion is suggested as the main mechanism for the turn-off of the drain current at - 10 V gate bias.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 8 )