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Large electric field effect on Al/BaTiO/sub 3//Y/sub 0.6/Pr/sub 0.4/Ba/sub 2/Cu/sub 3/O/sub 7-y/ structure

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6 Author(s)
S. Hontsu ; Dept. of Electron. Syst. & Inf. Eng., Kinki Univ., Wakayama, Japan ; J. Ishii ; M. Nakamori ; H. Tabata
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A superconducting field effect transistor with Al/BaTiO/sub 3//Y/sub 0.6/Pr/sub 0.4/Ba/sub 2/Cu/sub 3/O/sub 7-y/ multistructures has been fabricated by in situ pulsed laser deposition technique. The BTO/YPBCO bilayers show well crystallized structures by X-ray diffraction measurements. The relative dielectric constant (/spl epsi//sub r/) of BTO is 170 at 77 K. The observed relative change of the source-drain resistance (/spl Delta/R/sub SD//R/sub SD/) is enhanced up to -17.2% by the application of electric field. This value is 34 times as large as calculated from the modulation of areal carrier of field-induced charge density (/spl Delta/n/n).

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IEEE Transactions on Applied Superconductivity  (Volume:7 ,  Issue: 2 )