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Browse Journals & Magazines > Applied Physics Letters ...> Volume:100 Issue:25 Help

Potential barrier increase due to Gd doping of BiFeO3 layers in Nb:SrTiO3-BiFeO3-Pt structures displaying diode-like behavior

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5 Author(s)
Khassaf, H. ; Faculty of Engineering and Natural Sciences, Sabanci University, Orhanli-Tuzla, 34956 Istanbul, Turkey ; Ibanescu, G.A. ; Pintilie, I. ; Misirlioglu, I.B.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.4729816 

The rectifying properties of Nb:SrTiO3-Bi1-xGdxFeO3-Pt structures (x = 0, 0.05, 0.1) displaying diode-like behavior were investigated via current-voltage characteristics at different temperatures. The potential barrier was estimated for negative polarity assuming a Schottky-like thermionic emission with injection controlled by the interface and the drift controlled by the bulk. The height of the potential barrier at the Nb:SrTiO3-Bi1-xGdxFeO3 interface increases with Gd doping. The results are explained by the partial compensation of the p-type conduction due to Bi vacancies with Gd doping in addition to the shift of the Fermi level towards the middle of the bandgap with increasing dopant concentration.

Published in:
Applied Physics Letters  (Volume:100 ,  Issue: 25 )

Date of Publication: Jun 2012

Page(s):
252903 - 252903-4
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.4729816
Product Type:
Journals & Magazines
Date of Current Version :
21 June 2012
Issue Date :
Jun 2012

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