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We present the optimization of multiple-fin-height FinFET static random access memory (SRAM) to reduce cell leakage and improve the stability and density of SRAM. Using a taller fin FinFET for the pull-down device increases the read static noise margin of the SRAM and can potentially reduce the SRAM cell area. A reasonable amount of channel doping in all the transistors can be used to reduce the cell leakage current without appreciably degrading the stability of the SRAM cell. Increasing the channel doping of the access transistor simultaneously improves the read stability and decreases the cell leakage current of the SRAM cell.