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Modeling and Analysis of Transistor Mismatch Due to Variability in Short-Channel Effect Induced by Random Dopant Fluctuation

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2 Author(s)
Butt, N.Z. ; Microelectron. Div., Semicond. R&D Center, IBM, Hopewell Junction, NY, USA ; Johnson, J.B.

Transistor mismatch due to variability in short-channel effects induced by random dopant fluctuation is modeled in the light of 32-nm HKMG SOI dense SRAM bit-cell data. We present a simple analytical approach to model and characterize the mismatch increase in saturation relative to the linear mode. The increased mismatch in saturation can be mitigated by optimizing the choice of halo and well implants for channel doping.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 8 )

Date of Publication:

Aug. 2012

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