Skip to Main Content
Radiation from a linear array oscillator with a spiral antenna has been measured using an off-chip coupled bolometer. The array oscillator has a distributed array structure with 300 resistively shunted junctions which are placed in the groups of 6 junctions. The array oscillator was fabricated on a Si wafer with a two-arm spiral antenna. The chip was attached to a Si lens with an anti-reflection coating. Rather large power (>100 nW) was detected at a number of array bias voltages V/sub bias/ from 115 mV to 196 mV, which correspond from 185 GHz to 315 GHz. The maximum measured power was 550 nW at V/sub bias/=125 mV (200 GHz).