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The author shows how very low angle annular dark field (VLAADF) imaging in the scanning transmission electron microscope (STEM) is used to delineate regions of different orientation or structural phase in the same material. First, the author describes the settings used to obtain images in which only very low indexed beams contribute to the image formation. These settings can be implemented easily on any commercial STEM/TEM by choosing the appropriate camera length and objective aperture. The author then demonstrates how VLAADF was used to perform detailed grain size studies in Cu interconnects, and show how the technique can be used to outline the amorphous region within the crystalline matrix in a phase change memory device. The author finishes by addressing and discussing the dependence of the “orientation contrast” on the main imaging parameters.