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Far-infrared photoconductive detectors based on intersubband transitions in III-nitride semiconductor quantum wells are demonstrated. The device active material is based on a double-step quantum-well design, where two different (Al)GaN compositions are used both in the wells and in the barriers. With this approach, one can create a virtually flat multiple-quantum-well potential energy profile, where the deleterious effects of the intrinsic spontaneous and piezoelectric fields of nitride heterostructures are almost completely eliminated. Photocurrent spectra centered at a wavelength of 23 μm (13 THz frequency) are resolved up to 50 K, with responsivity of approximately 7 mA/W.
Published in:
Applied Physics Letters
(Volume:100
,
Issue:
24
)
Date of Publication: Jun 2012
- Page(s):
- 241113 - 241113-4
- ISSN :
- 0003-6951
- Digital Object Identifier :
- 10.1063/1.4729470
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 18 June 2012
- Issue Date :
- Jun 2012
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