By Topic

Low phase noise V-band push-push voltage controlled oscillator using 0.15 μm GaAs pseudomorphic high electron-mobility transistor technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Kao, H.-L. ; Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan ; Shih, S.P. ; Yeh, C.S.

A low phase noise, low dissipated power and small-size V-band voltage-controlled oscillator (VCO) using dual cross-coupled pair configuration, capacitance-splitting technique and push-push topology is presented. The V-band VCO circuit uses 0.15 μm GaAs pseudomorphic high electron-mobility transistor technology. The VCO has low phase noise, of -108.43-dBc/Hz, at a 1-MHz offset from a 62-GHz carrier and can be tuned from 61.11 to 62.66-GHz. The figure of merit is -190.45-dBc/Hz. The power consumption of the VCO with 1.04-mm2 chip area is 24 mW, from a 1 V power supply.

Published in:

Microwaves, Antennas & Propagation, IET  (Volume:6 ,  Issue: 6 )