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Tunable resonant cavity enhanced photodetectors with GaInAsSb/AlGaAsSb multiple quantum well structure grown by molecular beam epitaxy

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5 Author(s)
Yan Shi ; Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA ; J. H. Zhao ; J. Sarathy ; G. H. Olsen
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Tunable resonant cavity enhanced photodetectors based on a GaInAsSb/AlGaAsSb multiple quantum well structure grown by molecular beam epitaxy have been successfully demonstrated. A tuning range of 20 nm is realised at 110 K with a reverse bias voltage of 8 V, and the quantum efficiency is enhanced by the cavity to reach 20%, compared to ~1% for a non-resonant photodetector of similar structure

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Electronics Letters  (Volume:33 ,  Issue: 17 )