Referenced Items are not available for this document.
Using an arsenic-implanted polysilicon emitter/reduced pressure (RP) CVD-grown SiGe-base HBT, with an fT, of 52 GHz, an fmax of 32 GHz with a BVCEO, of 3.5 V, a 9 GHz-bandwidth preamplifier with a transimpedance gain of 45 dBΩ in a 10 Gbit/s optical receiver has been developed
Published in:
Electronics Letters
(Volume:33
,
Issue:
17
)
Date of Publication: 14 Aug 1997
- Page(s):
- 1479 - 1480
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 5693007
- Digital Object Identifier :
- 10.1049/el:19970966
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- 14 Aug 1997
- Sponsored by :
- Institution of Engineering and Technology
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