Skip to Main Content
The fabrication and experimental characterisation of a two-stage band-pass filter based on curved waveguide sidewall gratings is reported for the silicon-on-insulator platform. At each cascaded filtering stage, the spectral components of the input signal are dispersed by the diffraction grating formed in the sidewall of a silicon strip waveguide. Different wavelengths are focused onto different positions along the Rowland circle and the filter central wavelength is selected by a specific receiver waveguide. By using two consecutive filtering stages, both the filter passband profile and the stopband rejection ratio are substantially increased. The grating is apodised and chirped to ensure a constant effective index along the grating length to minimise phase distortions. Blazed geometry is used to maximise the diffraction efficiency to the -1st order. The device was fabricated with electron beam lithography and reactive ion etching using a single etch step. A bandwidth of 6.2-nm was measured near 1590-nm for the fabricated filter, with a roll-off of 4-dB/nm at the passband edge, and a stopband rejection of 40-dB.