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Increasing the optical transition oscillator strength in GaSb-based type II quantum wells

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9 Author(s)
Janiak, F. ; Institute of Physics, Wrocław University of Technology, Wybrzez˙e Wyspiańskiego 27, Wrocław, Poland ; Sek, G. ; Motyka, M. ; Ryczko, K.
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The oscillator strength of the fundamental optical transition in GaSb-based type II quantum well structures as one of the crucial parameters for the performance of interband cascade lasers was investigated. Modulation spectroscopy, supported by eight-band k·p calculations, has been employed as a sensitive probing technique allowing to determine the transition intensities of samples with various layer structures. The results show that altering the composition of the valence band well in a type II system can efficiently enhance the transition oscillator strength. Especially, the utilization of a quaternary GaInAsSb material for hole confinement turned out to be highly beneficial.

Published in:

Applied Physics Letters  (Volume:100 ,  Issue: 23 )

Date of Publication:

Jun 2012

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