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Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

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3 Author(s)
Wen-Sheng Zhao ; Centre for Optical and EM Research, State Key Lab of MOI, Zhejiang University, Hangzhou 310058, China ; Jun Hu ; Wen-Yan Yin

Sensitivities of through-Si-via (TSV) interconnects to the process parameters are investigated numerically in this paper. Some important parameters of the coupled interconnects are examined and compared in detail, such as silicon conductivity of the substrate and radii of the TSVs, etc., where MOS effects are treated appropriately. The emerging materials, carbon nanotube (CNT) based TSVs are also included and studied.

Published in:

Electrical Design of Advanced Packaging and Systems Symposium (EDAPS), 2011 IEEE

Date of Conference:

12-14 Dec. 2011