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Effect of Inserting Al2O3 Layer and Device Structure in HfO2-Based ReRAM for Low Power Operation

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9 Author(s)
Wan Gee Kim ; R&D Div., Hynix Semicond. Inc., Icheon, South Korea ; Ja Yong Kim ; Ji Won Moon ; Moon Sig Joo
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In this paper, the effect of tunnel barrier and device structure for the reliable and low power resistive switching operation was researched in the HfO2 based ReRAM system. From the experimental results, the Al2O3 thin layer as the tunnel barrier lowered the operation current and improved thermal stability for the stable switching operation. Moreover, the additional decrease of the operation current was achieved through the cell size drop with the stable cell structure.

Published in:

Memory Workshop (IMW), 2012 4th IEEE International

Date of Conference:

20-23 May 2012